| 申请日期 | 2025-06-27 | 申请号 | US12078706 |
| 公开（公告）号 | US20090008638A1 | 公开（公告）日 | 2009-01-08 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Dong hun Kang; I hun Song; Young soo Park; Chang jung Kim; Eun ha Lee; Jae cheol Lee | ||
| 简介 | Example embodiments relate to an oxide semiconductor including zinc oxide (ZnO), a thin film transistor including a channel formed of the oxide semiconductor and a method of manufacturing the thin film transistor. The oxide semiconductor may include a GaxInyZnz oxide and at least one material selected from the group consisting of a 4A group element, a 4A group oxide, a rare earth element and combinations thereof. | ||
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