| 简介 |
PROBLEM TO BE SOLVED : To provide a magnetoresistive element, or the like, capable of lowering a current density required for a magnetization inversion, while maintaining high reluctivity, even if the element size is made minute.
SOLUTION : The magnetoresistive element has a first magnetic layer 41 fixing the magnetization direction in one direction, a non-magnetic layer 42 facing one surface of the first magnetic layer 41 and a second magnetic layer 43 formed, while facing a surface opposed to the surface facing the first magnetic layer 41 of the non-magnetic layer 42. The magnetoresistive element further has the non-magnetic layer 42, formed between the first magnetic layer 41 and the second magnetic layer 43 and a third magnetic layer 44, formed while facing the surface opposed to the surface facing the non-magnetic layer 42 of the second magnetic layer 43 and consisting of an alloy of a rare earth metal such as Gd and a transition metal, such as Fe. The magnetization direction of the second magnetic layer 43 is inverted, in response to an inversion in the magnetization direction of the third magnetic layer 44.
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