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Method for growing single crystal of rare earth silicate 发明授权

2023-08-21 1560 33K 0

专利信息

申请日期 2025-07-11 申请号 JP08230223
公开(公告)号 JP4195732B2 公开(公告)日 2008-12-10
公开国别 JP 申请人省市代码 全国
申请人 HITACHI CHEMICAL CO LTD
简介 PROBLEM TO BE SOLVED : To stably obtain a colorless single crystal having satisfactory performance as a scintillator by specifying the concn. of Fe as an impurity in a stock melt contg. oxide of a rare earth element and silicon oxide. SOLUTION : Characteristics of a single crystal of silicate of a rare earth element grown from a stock melt contg. oxide of the rare earth element are affected by a specified impurity element in the melt. In the case of growth of a gadolinium silicate single crystal, gadolinium oxide having a low concn. of Fe as an impurity is used as stock. By this low concn. of Fe, the coloring of the resultant crystal is prevented and characteristics as a scintillator can be improved. Fluorescence generated in the crystal by irradiation with radiation such as &gamma -rays enters a photomultiplier brought into contact with one face of the crystal and the fluorescence output and energy resolving power of the photomultiplier are enhanced. As a result, characteristics of the crystal as a scintillator are improved. When stock having <=0.1ppm concn. of Fe as an impurity is used, oxide of a rare earth element having <=0.1ppm concn. of Fe is used.


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