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The authentication circuit, the semiconductor device and method of using the same, and, IC card a 发明授权

2023-07-25 1970 141K 0

专利信息

申请日期 2025-06-28 申请号 JP2002029351
公开(公告)号 JP4189902B2 公开(公告)日 2008-12-03
公开国别 JP 申请人省市代码 全国
申请人 FUJITSU LTD
简介 An authentication circuit containing at least two types of ferroelectrics having different Curie temperatures and properties of retaining charges by residual polarization. An authentication signal stored in one of the ferroelectrics is erased when the ferroelectrics are held in a Curie temperature or more of the one of the ferroelectrics and below a Curie temperature of the ferroelectrics 2. In an authentication circuit, preferably one of the ferroelectrics outputs a primary authentication signal and, when the ferroelectric 2 receives the primary authentication signal, the ferroelectric 2 outputs a secondary authentication signal, and a plurality of ferroelectrics are formed of two or more types of elements and have different element compositions, the two or more elements are selected from Na, K, Ba, Cd, Hf, O, Pb, Zr, Ti, La, Ca, Sr, Tl, Bi, a rare earth element, Nb, Ta, W, Mo, Fe, Co, and Cr.


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