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DRY ETCHING METHOD 发明申请

2023-10-20 1340 1070K 0

专利信息

申请日期 2025-07-10 申请号 WOJP08058534
公开(公告)号 WO2008143004A1 公开(公告)日 2008-11-27
公开国别 WO 申请人省市代码 全国
申请人 ULVAC INC; MORIKAWA Yasuhiro; SUU Koukou; HAYASHI Toshio; SATOU Masayuki
简介 Provided is a dry etching method by which a substrate is not broken even when the both surfaces of the substrate are dry-etched. An etching gas composed of fluorocarbon gas and a rare gas is introduced into a vacuum chamber to generate plasma by having the inside of the vacuum chamber under a prescribed pressure. Then a substrate, which is to be processed and is firmly adhered to an adhesive surface of a thermal conductive sheet arranged on a substrate placing section, is processed by etching.


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