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PLASMA CORROSION-RESISTANT MATERIAL, AND MEMBER CONTAINING THE SAME 发明申请

2023-09-21 4470 45K 0

专利信息

申请日期 2025-07-08 申请号 JP2007118181
公开(公告)号 JP2008274342A 公开(公告)日 2008-11-13
公开国别 JP 申请人省市代码 全国
申请人 TOSOH CORP
简介 PROBLEM TO BE SOLVED : To solve a problem that though a rare-earth nitride is expected to manufacture a member for a semi-conductor manufacturing device having the corrosion resistance higher than that of yttrium, a single rare-earth nitride has a nature to be easily oxidized, and, for example, in the atmosphere, it is changed into a rare-earth oxide. SOLUTION : A plasma corrosion-resistant material consisting of a rare-earth nitride contains, by atom, 0.1-20% at least one kind of elements out of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Co, Rh, Ir, Ni, Pd, Pt, Au, Al, Ga and In as the metal elements in terms of the ratio of the metal element, and has resistance against plasma. This kind of plasma corrosion-resistant material can be manufactured by depositing a spray deposit film using a powder with metal being mixed in the rare-earth nitride powder. COPYRIGHT : (C)2009, JPO&INPIT


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