客服热线:18202992950

MAGNETIC MEMORY DEVICE 发明申请

2023-03-23 3710 161K 0

专利信息

申请日期 2025-07-01 申请号 JP2007121010
公开(公告)号 JP2008277621A 公开(公告)日 2008-11-13
公开国别 JP 申请人省市代码 全国
申请人 FUJITSU LTD
简介 PROBLEM TO BE SOLVED : To obtain a highly reliable magnetic memory device which makes sure magnetization reversing possible efficiently with a comparably simple constitution without any pair of current wirings, and can further miniaturize the memory device. SOLUTION : In the magnetic memory device, on both the side surfaces of a laminate comprising an insulating layer 3, a magnetization reversing layer 4, and a carrier injecting layer 5, at least on both the side surfaces of the magnetization reversing layer 4, insulating layers 6 and non-magnetic metal layers are provided, and on both the side surfaces of the resultant object, a pair of magnetization controlling layers 8 are provided via Ru layers 7. The carrier injecting layer 5 is formed out of SrTiO3, and the magnetization controlling layer 8 is formed out of such an alloy of rare-earth transition metals as GdFeCo, GdDyFeCo, and GdNdFeCo. COPYRIGHT : (C)2009, JPO&INPIT


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4