| 简介 |
PROBLEM TO BE SOLVED : To provide a method for effectively removing a metal element retained in a crystalline semiconductor film obtained by using the metal element having a catalytic action for the crystallization of a semiconductor film. SOLUTION : The method for removing the metal element comprises the steps of forming a barrier layer 105 on a first semiconductor film 104 having a crystal structure provided on a substrate and a second semiconductor film 106 including a rare gas element, passing the metal element included in the film 104 through the layer 105 by heat treating, and conducting gettering for moving the element to the film 106. COPYRIGHT : (C)2003, JPO |
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