| 简介 |
PROBLEM TO BE SOLVED : To enhance the orientation rate of a semiconductor film obtained by crystallizing an amorphous semiconductor film while relaxing strain, and to provide a TFT employing such a crystalline semiconductor film. SOLUTION : The orientation rate of a semiconductor film 104 is enhanced by adding a rare gas element, typically argon, into an amorphous semiconductor film 102 during or after formation thereof thereby crystallizing the amorphous semiconductor film, and strain existing in the crystallized semiconductor film 104 is relaxed as compared with that before crystallization. The film is eventually irradiated with laser light in order to remove rare gas elements. |
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