| 简介 |
The invention is based on the problem, a multi-color emitting Si-based light emitter to realize, the simply constructed and can be produced with only one rare earth-doping. The invention starts from a Si-based light emitter, the consists of a front metal contact, a protective dielectric layer, a Si-substrate and a back, conductive contact layer, and includes substantially that between Si-substrate (1) and dielectric protective layer (4) within a thin SiO 2 -Layer (3), by local thermal oxidation within a by a thicker SiO 2 -Layer formed was generated environment, europium- [...] (5) are located and that electrical connections to metal contact (6) and Backside aluminum layer (8) are provided, to a power source via a selectable time constant current in order to be acted upon by a variable are connected. |
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