| 简介 |
There are disclosed an epitaxial film, comprising : heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; and forming on the SiO2 layer by use of a metal target represented by the following composition formula : yA(1 y)B (1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula : xA2O3- (1 x)BO2 (2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less. |
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