| 申请日期 | 2025-06-28 | 申请号 | US11031289 |
| 公开（公告）号 | US7439194B2 | 公开（公告）日 | 2008-10-21 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Kie Y Ahn; Leonard Forbes | ||
| 简介 | A dielectric film containing lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by evaporation of Ti, a lanthanide, and oxidation of the evaporated Ti/lanthanide film using an oxygen plasma. | ||
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