| 申请日期 | 2026-04-25 | 申请号 | US11957880 |
| 公开（公告）号 | US20080253925A1 | 公开（公告）日 | 2008-10-16 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Jianshe XUE; Ke LIANG | ||
| 简介 | Provided are a target material for manufacturing an electrode film of a semiconductor device, methods of manufacturing the target material and manufacturing the electrode film. The target material comprises Al-RE alloy or Al—Ni-RE alloy, in which RE is a mixture of rare earth elements comprising La, Ce, Pr, and Nd. | ||
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