| 简介 |
Disclosed is a resistance memory element which has a relatively high switching voltage and can achieve a relatively high change ratio in resistance. The resistance memory element comprises a base material (2) and opposite electrodes (3, 4) which are opposed to each other through at least a part of the base material (2), wherein the base material (2) comprises a semiconductor ceramic material represented by the general formula : {(Sr1-xMx)1-yAy}(Ti1-zBz)O3 [wherein M represents at least one of Ba or Ca; A represents at least one element selected from Y and rare earth elements; and B represents at least one of Nb and Ta], and wherein x, y and z satisfy the following requirements : when 0
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