| 简介 |
A nonvolatile semiconductor memory device of high reliability is provided to prevent deterioration of a memory transistor caused by diffusing a metal element into a channel formation region. A nonvolatile semiconductor memory device comprises : a first semiconductor layer having a source region and a drain region, and a channel formation area(103) formed between the source and drain regions; a first insulating layer formed on the first semiconductor layer; a first gate electrode formed on the first insulating layer; a second insulating layer formed on the first gate electrode; and a second gate electrode formed on the second insulating layer, wherein the source and the drain regions each include metal silicide, and the first gate electrode includes a rare-gas element. |
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