| 申请日期 | 2025-06-28 | 申请号 | US11140524 |
| 公开（公告）号 | USRE040485E | 公开（公告）日 | 2008-09-09 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Yuji Hori; Tomohiko Shibata; Mitsuhiro Tanaka; Osamu Oda | ||
| 简介 | In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions. | ||
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