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METHOD FOR PRODUCTION OF RARE EARTH VANADATE SINGLE CRYSTAL 发明申请

2023-08-17 3960 47K 0

专利信息

申请日期 2025-08-09 申请号 JP2007038858
公开(公告)号 JP2008201618A 公开(公告)日 2008-09-04
公开国别 JP 申请人省市代码 全国
申请人 COVALENT MATERIALS CORP; OXIDE CORP
简介 PROBLEM TO BE SOLVED : To provide a method for production of a rare earth vanadate single crystal which has no crystal defect, has high quality, is large-sized platy and is suitable for use in a semiconductor laser-excited solid-state laser. SOLUTION : The platy rare earth vanadate single crystal has the shoulder parts 6 in which a crystal width is gradually widened, and is produced by using a seed crystal 4 of orientation [110] and growing the crystal toward the orientation [110] by an edge-defined film-fed crystal growth (EFG) method. COPYRIGHT : (C)2008, JPO&INPIT


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