| 申请日期 | 2026-04-22 | 申请号 | JP2002355728 |
| 公开（公告）号 | JP4142941B2 | 公开（公告）日 | 2008-09-03 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | TOSHIBA CORPORATION3078; Sony Corporation2185 | ||
| 简介 | A semiconductor device manufacturing method comprises forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber, carrying the substrate into a second chamber other than the first chamber, and discharging a rare gas in the second chamber, and forming a second insulating film including silicon, carbon, oxygen, and hydrogen above the first insulating film after the discharging the rare gas. | ||
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