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Multilayer zinc oxide varistor 发明授权

2023-10-29 1340 420K 0

专利信息

申请日期 2025-06-25 申请号 US11440064
公开(公告)号 US7541910B2 公开(公告)日 2009-06-02
公开国别 US 申请人省市代码 全国
申请人 Wei Cheng Lien; Cheng Tsung Kuo; Jun Nun Lin; Jie An Zhu; Li Yun Zhang
简介 A multilayer zinc oxide varistor without bismuth oxide system ingredients, and having variable breakdown voltages by controlling the thickness of the ceramic material; the varistor is bismuth-free and composed of zinc oxide as the primary constituent with alkaline earth element (Ba) as first additive, at least one of transition elements of Mn, Co, Cr, or Ni as second additives, at least one of rare earth elements of Pr, La, Ce, Nd or Tb as third additives and at least one of B, Si, Se, Al, Ti, W, Sn, Sb, Na, or K as rest additives, and the bismuth-free and zinc oxide based varistor exhibits an excellent ESD (Electro-Static Discharge) withstanding characteristic.


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