| 简介 |
This invention provides a columnar material of an aluminum nitride single crystal characterized by satisfying the following requirements [a] to [c] and having a polygonal columnar shape. [a] The content of the metal impurity is a detection limit or less. [b] The average bottom area is 5 Œ 103 to 2 Œ 105μm2. [c] The average height is 50 μm to 5 mm.The polygonal columnar aluminum nitride single crystal is preferably produced by heating aluminum nitride as a starting material (A) containing 0.1 to 30% by mass of a rare earth oxide at a temperature of 2000˚C or above for sublimation, and depositing aluminum nitride on a hexagonal single crystal substrate to grow a polygonal columnar aluminum nitride single crystal. |
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