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A method of forming a silicon oxynitride film and forming device 发明授权

2023-09-04 2070 60K 0

专利信息

申请日期 2025-07-12 申请号 JP2004121436
公开(公告)号 JP4268085B2 公开(公告)日 2009-05-27
公开国别 JP 申请人省市代码 全国
申请人 Nippon Telegraph and Telephone Corporation4226
简介 PROBLEM TO BE SOLVED : To deposit an SiON film added with a rare earth element. SOLUTION : The inside of a deposition chamber 102 and an ECR ion source 101 is evacuated to a vacuum and the plasma by gaseous argon, gaseous oxygen and gaseous nitrogen is generated by an electron cyclotron resonance method in an ECR ion source 101. The generated plasma ion is extracted from an ion extraction port 102a and the extracted plasma is irradiated to the surface of the substrate 105 to which gaseous silane is supplied from a source gas introducing section 107. Silicon oxynitride is deposited on the substrate 105 and a high-frequency voltage is applied to a rare earth metal target 111 to induce a sputtering phenomenon and the rare earth elements constituting the rare earth metal target 111 is jumped out and is made to arrive at the substrate 105. COPYRIGHT : (C)2006, JPO&NCIPI


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