| 简介 |
The present invention describes a method including the steps of providing a single crystal semiconductor substrate, forming a layer of rare earth silicide on a surface of the semiconductor substrate, forming a first layer of insulating material on the layer of rare earth silicide, forming a layer of electrically conductive material on the first layer of insulating material, and forming a second layer of insulating material on the layer of electrically conductive material. In one embodiment the step of forming the layer of rare earth silicide includes depositing a layer of rare earth metal on a surface of the semiconductor substrate depositing a layer of insulating material on the layer of rare earth metal, and annealing the structure to form a layer of rare earth silicide in conjunction with the surface of the semiconductor substrate and a rare earth doped insulating layer in conjunction with the layer of insulating material. |
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