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THERMOELECTRIC MATERIAL AND ITS MANUFACTURING METHOD 发明申请

2023-04-29 3940 269K 0

专利信息

申请日期 2025-07-18 申请号 JP2008241983
公开(公告)号 JP2009111357A 公开(公告)日 2009-05-21
公开国别 JP 申请人省市代码 全国
申请人 TOYOTA CENTRAL RES DEV; TOYOTA MOTOR CORP; AISIN SEIKI
简介 PROBLEM TO BE SOLVED : To provide a thermoelectric material which is high in thermoelectric characteristics, does not contain a large amount of harmful elements, is inexpensive and excellent in oxidation resistance and stability, and to provide its manufacturing method. SOLUTION : The thermoelectric material contains a half-Heusler compound having the following structure. (1) The half-Heusler compound has a crystal structure of AgAsMg type. (2) The number of valence electrons per atom of the half-Heusler compound is six. (3) The half-Heusler compound contains any two or more of Ni, Pd, and Pt in a 4c site. (4) The half-Heusler compound contains Bi in either of a 4b site or a 4a site. (5) The half-Heusler compound contains one or more elements selected from rare earth elements in either of the 4a site or the 4b site. (6) A shift amount to a logic value of a diffraction angle 2[!theta!] of the strongest beam peak of the half-Heusler compound is ±0.1 deg. COPYRIGHT : (C)2009, JPO&INPIT


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