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The improved high temperature characteristic organoiridium doped 发明申请

2023-05-12 3060 138K 0

专利信息

申请日期 2025-09-13 申请号 JP2008520766
公开(公告)号 JP2009520109A 公开(公告)日 2009-05-21
公开国别 JP 申请人省市代码 全国
申请人 W C Heraeus GmbH
简介 The invention relates to an iridium alloy of at least 85% by weight iridium, at least 0.005% by weight molybdenum, 0.001 to 0.6% by weight hafnium and, if necessary, rhenium, the sum of molybdenum and hafnium being between 0.02 and 1.2% by weight, and to a process for the production of an iridium alloy, an IrMo and an IrHf master alloy, respectively, being produced in the electric arc and immersed into an iridium melt, if necessary together with Re.


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