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The phosphor and a light emitting device and manufacturing method thereof 发明申请

2023-05-07 3120 237K 0

专利信息

申请日期 2025-08-06 申请号 JP2007549180
公开(公告)号 JPWO2007066733A1 公开(公告)日 2009-05-21
公开国别 JP 申请人省市代码 全国
申请人 JAPAN SCIENCE TECH CORP; NAT INST FOR MATERIALS SCIENCE
简介 The application relates to a manufacturing method of a phosphor comprising : an oxygen content reduction step of reducing oxygen content and increasing nitrogen content in oxynitride phosphor powder having a ²-type Si 3 N 4 crystal structure including Eu by heat-treating the powder in a reduction-nitridation atmosphere and a manufacturing method of a phosphor comprising : heat-treating silicon nitride raw powder in a reduction-nitridation atmosphere; adding raw powder containing at least Eu and Al to the treated powder in which oxygen content is reduced during the heat treatment; and firing the powder at a temperature of 2200 °C or lower after the addition.


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