客服热线:18202992950

Method of manufacturing a rare-earth doped alkaline-earth silicon nitride phosphor, rare-earth dope 发明申请

2023-04-13 4990 325K 0

专利信息

申请日期 2026-04-26 申请号 EP07118436
公开(公告)号 EP2058382A1 公开(公告)日 2009-05-13
公开国别 EP 申请人省市代码 全国
申请人 Leuchtstoffwerk Breitungen GmbH; Ledon Lighting Jennersdorf GmbH
简介 The invention relates to a method of manufacturing a rare-earth (RE) doped alkaline-earth silicon nitride phosphor (AE2Si5N8) of a stoichiometric composition, said method comprising the step of selecting one or more compounds each comprising at least one element of the group comprising the rare-earth elements (RE), the alkaline-earth elements (AE), silicon (Si) and nitrogen (N) and together comprising the necessary elements to form the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8 : IRE) bringing the compounds at an elevated temperature in reaction for forming the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8 : RE), a small amount of oxygen, whether intentionally or not-intentionally added, being incorporated in the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8 : RE) thus formed. According to the invention the creation of defects by formation of a non stoichiometric oxygen containing phosphor is at least partly prevented by partly substituting for the ions (AE, Si, N) of the alkaline-earth silicon nitride phosphor (AE2Si5N8) suitable further elements of the periodic system by which vacancies are created, filled or annihilated resulting in the formation of a modified alkaline-earth silicon nitride phosphor (AE2Si5N8) having a stoichiometric composition. In this way a modified phosphor is obtained having excellent and stable optical properties. The invention further comprises a modified phosphor obtainable by a method according to the invention and a radiation-emitting device comprising such a phosphor.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4