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INSULATION FILM MANUFACTURING METHOD, REACTION DEVICE, POWER GENERATION DEVICE AND ELECTRONIC APPA 发明申请

2023-09-27 1340 4773K 0

专利信息

申请日期 2025-06-26 申请号 KR1020090026504
公开(公告)号 KR1020090046764A 公开(公告)日 2009-05-11
公开国别 KR 申请人省市代码 全国
申请人 CASIO COMPUTER CO LTD
简介 PURPOSE : An insulation film manufacturing method, a reaction device, a power generation device and an electronic apparatus are provided to prevent the cracking or the exfoliation of the insulating layer by reducing the difference of the coefficient of thermal expansion with the metallic board.CONSTITUTION : An insulating layer(31) is formed on the lower-part of the bottom door(3). The insulating layer is formed with R2O3 film(R is the rare earth materials) like Y2O3 and gd2O3 film having the crystalline structure. The insulating layer has the crystalline structure made of at least one among the rare earth materials of Sc, Y, La, Gd, Dy, Ho, Er, Tm and Lu. A thin film heater(32) is patterned on the surface of the insulating layer by the photolithographic technique. The thin film heater is formed into the laminating structure of an exothermic resistance layer(35), a diffusion stopping layer(34) and a metal coherent layer(33).© KIPO 2009


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