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The aluminum nitride substrate and thin film substrate using the same 发明授权

2023-08-08 3150 172K 0

专利信息

申请日期 2025-07-29 申请号 JP2001350153
公开(公告)号 JP4248173B2 公开(公告)日 2009-04-02
公开国别 JP 申请人省市代码 全国
申请人 TOSHIBA CORPORATION3078; Toshiba Materials Co Ltd303058328
简介 An aluminum nitride substrate includes an aluminum nitride sintered body containing a rare earth oxide as a sintering additive component. In the aluminum nitride substrate, a surface thereof is machined so that arithmetic average roughness Ra is 0.5 mum or less; an aggregate size of the sintering additive component present on the machined surface is 20 mum or less; and a total aggregate area in a unit area of the machined surface is 5% or less. A metal thin film is deposited on such machined surface with good intimate contact properties, and furthermore deposition accuracy or the like is improved.


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