| 申请日期 | 2025-06-24 | 申请号 | WOUS08077797 |
| 公开（公告）号 | WO2009042835A1 | 公开（公告）日 | 2009-04-02 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | TOKYO ELECTRON LIMITED; ROBISON Rodney L; TRICKETT Douglas M | ||
| 简介 | Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transition metal precursor or a rare earth metal precursor. | ||
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