| 简介 |
Disclosed is a method for forming a gate insulating film comprising an oxidation step wherein a silicon oxide film is formed by having an oxygen-containing plasma act on silicon in the surface of an object to be processed in a process chamber of a plasma processing apparatus. The processing temperature in the oxidation step is more than 600°C and not more than 1000°C, and the oxygen-containing plasma is formed by introducing an oxygen-containing process gas containing at least a rare gas and an oxygen gas into the process chamber while introducing a high-frequency wave or microwave into the process chamber through an antenna.
© KIPO & WIPO 2008 |
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