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Nitride single crystal and producing method thereof 发明授权

2023-05-16 4300 437K 0

专利信息

申请日期 2025-09-18 申请号 US10866007
公开(公告)号 US7294199B2 公开(公告)日 2007-11-13
公开国别 US 申请人省市代码 全国
申请人 Koji Uematsu; Seiji Nakahata
简介 A method of producing a nitride single crystal includes the step of forming a material transport medium layer containing a compound of rare earth element on a surface of a nitride crystal, and the step of making a seed crystal in contact with the material transport medium layer to grow a nitride single crystal on the seed crystal. The material transport medium layer contains the compound of rare earth element and at least one compound selected from a group of aluminum compound, alkaline earth compound and transition metal compound. With this producing method, a large nitride single crystal having a crystal size of at least 10 mm is obtained.


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