| 简介 |
The method involves forming cavities (66) in a silicon dioxide layer (60) by the implantation of a rare gas other than helium or neon at an implantation dose of greater than 101>6 atoms per square centimeter based on desired average diameter of the cavities, where the rare gas is a xenon or krypton or argon. The cavities are located in the depth of a silicon dioxide portion (64). An independent claim is also included for a component comprising metallic tracks and regions separating the metallic tracks. |
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