| 申请日期 | 2025-06-25 | 申请号 | DE10248962 |
| 公开（公告）号 | DE10248962B4 | 公开（公告）日 | 2007-10-25 |
| 公开国别 | DE | 申请人省市代码 | 全国 |
| 申请人 | THEVA DUENNSCHICHTTECHNIK GMBH | ||
| 简介 | Production of a high temperature superconductor layer on a substrate comprises depositing a RBa2Cu3O7 layer (2) (where R = Y, a rare earth element of the atomic number 57-71 or a mixture of these) on the substrate (1a) using a low growth rate, and depositing a XBa2Cu3O7 layer (3) (where R = Y, a rare earth element of the atomic number 57-71 or a mixture of these) on the RBa2Cu3O7 layer using a high growth rate. | ||
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