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SINTERED SILICON NITRIDE, METHOD OF MANUFACTURING THE SAME AND SINTERED SILICON NITRIDE SUBSTRATE 发明申请

2023-07-23 4770 4777K 0

专利信息

申请日期 2025-07-01 申请号 KR1020070095109
公开(公告)号 KR1020070103330A 公开(公告)日 2007-10-23
公开国别 KR 申请人省市代码 全国
申请人 HITACHI METALS LTD
简介 PURPOSE : A silicon nitride sintered body, a method for preparing the same, and a silicon nitride substrate are provided to produce a silicon nitride sintered body having excellent mechanical strength and free from anisotropic thermal conductivity. CONSTITUTION : A silicon nitride sintered body comprises Mg, and at least one rare earth element selected from a group consisting of La, Y, Gd and Yb. When Mg is converted to MgO and the rare earth elements are converted to rare earth oxides, the total oxide-converted content of the elements is 0.6-7 wt%%. The silicon nitride sintered body has a thermal conductivity of more than 100 W/m·K, and a three-point bending strength of more than 600 MPa at room temperature. © KIPO 2007


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