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Anisotropic thin-film rare-earth permanent magnet 发明授权

2023-10-21 3730 526K 0

专利信息

申请日期 2025-07-08 申请号 US10343480
公开(公告)号 US7285338B2 公开(公告)日 2007-10-23
公开国别 US 申请人省市代码 全国
申请人 Osamu Yamashita; Ken Makita
简介 An anisotropic thin-film rare-earth permanent magnet endowed with high magnetic characteristics by rendering a vapor-phase-grown thin film anisotropic in the layering direction. The atomic laminate units are formed by laminating a monoatomic layer of a rare earth element on a substrate of a non-magnetic material having, a flat smoothness and then by laminating an atomic laminate of a transition metal element having a plurality of monoatomic layers of a transition metal element, so that the atomic laminate units of a characteristic construction are laminated in a plurality of layers. As a result, each atomic laminate of the transition metal element has an easy magnetizable axis in the laminate direction of the monoatomic layers and which are sandwiched between a monoatomic layer of a rare-earth element so that an inverse magnetic domain is suppressed to establish a strong coercive force. Moreover, the content of the transition metal element to the rare-earth metal is raised to improve the residual magnetic flux density drastically.


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