| 简介 |
PURPOSE : A schottky barrier tunnel transistor and a method of manufacturing the same are provided to obtain a thin gate insulating layer easily and to prevent the decrease of a saturated current due to a parasitic resistance by forming a gate electrode, a source region and a drain region like a schottky junction structure using a silicide layer.
CONSTITUTION : A gate electrode(113) is formed on a channel region of a silicon substrate in order to form a schottky junction together with the silicon substrate. Source and drain regions(115) are formed in the silicon substrate through both sides of the gate electrode. The gate electrode is composed of a metal film made of a transitional metal or a rare metal. The gate electrode is composed of a metal silicide layer. The source and drain regions are made of the metal silicide layer.
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