| 申请日期 | 2025-06-30 | 申请号 | WOUS07065024 |
| 公开（公告）号 | WO2007117991A1 | 公开（公告）日 | 2007-10-18 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | TOKYO ELECTRON LIMITED; TOKYO ELECTRON AMERICA INC; CLARK Robert D | ||
| 简介 | A semiconductor device (90, 91), such as a transistor or capacitor, is provided. The device (90, 91) includes a substrate (25, 92), a gate dielectric (96) over the substrate (25, 92), and a conductive gate electrode film (98) over the gate dielectric (96). The gate dielectric (96) includes a mixed rare earth oxide, nitride or oxynitride film containing at least two different rare earth metal elements. | ||
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