| 申请日期 | 2025-07-08 | 申请号 | DE60032410 |
| 公开（公告）号 | DE60032410T2 | 公开（公告）日 | 2007-10-11 |
| 公开国别 | DE | 申请人省市代码 | 全国 |
| 申请人 | TDK CORP | ||
| 简介 | A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. Preferably the metal film (4) comprises at Pt group metal and is formed on an oriented faceted buffer layer (3) comprising zirconium oxide and/or rare earth oxide. A film bulk acoustic resonator having an extremely broad band is realized. | ||
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