| 申请日期 | 2026-04-17 | 申请号 | US11278399 |
| 公开（公告）号 | US20070235822A1 | 公开（公告）日 | 2007-10-11 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Robert D Clark | ||
| 简介 | A semiconductor device, such as a transistor or capacitor, is provided. The device includes a substrate, a gate dielectric over the substrate, and a conductive gate electrode film over the gate dielectric. The gate dielectric includes a mixed rare earth aluminum oxide, nitride or oxynitride film containing aluminum and at least two different rare earth metal elements. | ||
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