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Electronic Package Formed Using Low-Temperature Active Solder Including Indium, Bismuth, and/or Ca 发明申请

2022-12-25 2600 1187K 0

专利信息

申请日期 2025-06-28 申请号 US11579413
公开(公告)号 US20070228109A1 公开(公告)日 2007-10-04
公开国别 US 申请人省市代码 全国
申请人 SMITH RONALD W; REDD RANDALL
简介 An active solder alloy, an electronic device package including the active solder alloy bonding an electronic device to a substrate, and a method of forming high-strength joints by soldering using the solder alloy. The alloy contains up to about 10% by weight of an element or a mixture of elements selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, or tantalum; between about 0.1 and 5% by weight of an element or a mixture of elements selected from the group of the lanthanides (rare earths); between about 0.01 and 1% by weight of gallium up to about 10% by weight of silver; up to about 2% by weight of magnesium; and a remainder consisting of tin, bismuth, indium, cadmium, or a mixture of two or more of these elements. The alloy enables low-temperature (less than about 180° C.) soldering within relatively narrow melting ranges (less than about 10° C.).


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