| 简介 |
This invention provides a gold wire for semiconductor element connection having high strength and high bondability. The gold wire for semiconductor connection comprises a limited amount of at least one element in a group of elements selected from calcium and rare earth elements, and a limited amount of at least one element in a group of elements selected from titanium, vanadium, chromium, hafnium, niobium, tungsten, and zirconium. The incorporation of a suitable amount of palladium or beryllium is preferred. The incorporation of calcium and rare earth element can improve the strength and young’s modulus of a gold wire, and the incorporation of titanium and the like can reduce a deterioration in the roundness of pressure bonded shape of pressure bonded balls in fast bonding with calcium and rare earth elements. Since a bonding wire, which can simultaneously realize mechanical properties and bondability capable of coping with a demand for a size reduction in semiconductor and a reduction in electrode pad pitch, can be realized, an improvement in workability of the manufacture of semiconductor devices and product yield can be realized. |
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