| 简介 |
PROBLEM TO BE SOLVED : To provide a nonvolatile semiconductor memory having good cell operation characteristics by suppressing deterioration of film quality due to heat treatment in the back process of an inter-electrode insulation film when the inter-electrode insulation film of high dielectric material such as rare earth oxide, rare earth nitride or rare earth oxide nitride is employed in a memory cell; and to provide its fabrication process.
SOLUTION : The memory cell of a nonvolatile semiconductor memory comprises a tunnel insulation film 2, a floating gate electrode 3 of Si based semiconductor material, an inter-electrode insulation film 12 of rare earth oxide, rare earth nitride or rare earth oxide nitride, and a control gate electrode 13. A metal silicide film 10 is provided between the floating gate electrode 3 and the inter-electrode insulation film 12.
COPYRIGHT : (C)2007, JPO&INPIT |
客服热线：
手机版
二维码
