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CAPACITOR AND ITS MANUFACTURING METHOD 发明申请

2023-03-29 4820 60K 0

专利信息

申请日期 2025-06-26 申请号 JP2006075379
公开(公告)号 JP2007251052A 公开(公告)日 2007-09-27
公开国别 JP 申请人省市代码 全国
申请人 FUJITSU LTD
简介 PROBLEM TO BE SOLVED : To form a dielectric film whose principal component is PZT stabilizing a polarization property by adding rare earth ion or alkaline earth element to an upper part of wiring layers or between wiring layers made by applying a wiring layer forming process of a semiconductor device in a capacitor and a method of manufacturing the capacitor. SOLUTION : The capacitor is formed on a substrate 2 and is constituted by laminating a lower electrode 6, a dielectric film 7 and an upper electrode 8, characterized in that a titanium film intervenes between the lower electrode 6 and the dielectric film 7, and the dielectric film 7 includes the rare earth ion containing yttrium or scandium, or alkaline earth metal. COPYRIGHT : (C)2007, JPO&INPIT


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