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The manufacturing method of a superconductor material doped 发明申请

2023-12-10 5030 225K 0

专利信息

申请日期 2025-08-21 申请号 JP2006516382
公开(公告)号 JP2007527350A 公开(公告)日 2007-09-27
公开国别 JP 申请人省市代码 全国
申请人 TARRANT Colin David; SCHNEIDER Kelvin Robert
简介 The invention provides a method of manufacturing a doped i X-Ba-Cu-O material, the method comprising the steps of : a) mixing an X-Ba-L-O or X-Ba-Cu-L-O material with an X-1 Ba-Cu-O material; and b) crystallising the mixture; 1 wherein each X is independently selected from a rare earth (Group IIIB) element, yttrium, a combination of rare earth elements, or a combination of yttrium and a rare earth element; and L is selected from U, Nb, Ta, Mo, W, Zr, Hf, Ag, Pt, Ru and Sn. The invention further provides a doped material manufactured by the method of the invention.


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