| 简介 |
A thermoelectric semiconductor that realizes not only low thermal conductivity but also enhancement of dimensionless performance index. There is provided thermoelectric semiconductor (1) having a laminate structure consisting of a laminate of multiple combinations each composed of principal layer (6) of a first material and sublayer (7) of a second material whose thermal conductivity is lower than that of the principal layer (6) of a first material. When the thermoelectric semiconductor (1) is of n-type, for example, the first material has a composition of the formula (Zn1-xAlx)O, and the second material has a composition of the formula (Zn1-y-zAlyMz)O (M is a divalent or higher valence element not becoming an acceptor, preferably a transition metal element or rare earth element). |
客服热线：
手机版
二维码
