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MEMORY DEVICE FAIL SUMMARY DATA REDUCTION FOR IMPROVED REDUNDANCY ANALYSIS 发明申请

2023-02-09 2710 1070K 0

专利信息

申请日期 2026-03-10 申请号 KR1020070022113
公开(公告)号 KR1020070091578A 公开(公告)日 2007-09-11
公开国别 KR 申请人省市代码 全国
申请人 VERIGY (SINGAPORE) PTE LTD
简介 PURPOSE : A method for extracting repair information, a computer readable recording medium and a system are provided to recognize a memory cell group to be repaired and recover rare fail information from a captured error image, more efficiently. CONSTITUTION : According to a method for extracting repair information from an error data image of a memory device, the error data image on the fail of a first memory cell group set organized according to first dimension among selected address sets is scanned. The number of fails of the individual memory cell group of the first set is continuously traced, and a random memory cell group with a number of fails equal to or exceeding a first maximum fail threshold is continuously traced and is defined as a memory cell group to be repaired. The error data image on the fail of a second memory cell group set organized according to second dimension among selected address sets is scanned, and the number of fails of the individual memory cell group of the second set is continuously traced, and a random memory cell group with a number of fails equal to or exceeding a second maximum fail threshold is continuously traced and is defined as a memory cell group to be repaired. One or both of a first tag image related with the memory cell group of the first set and a second tag image related with the memory cell group of the second set are generated. The first tag image represents the memory cell of the first set including a fail, and the second tag image represents the memory cell group of the second set including a fail. At least one of the first and the second tag image excludes the representation of the fail of the designated must-repair memory cell. © KIPO 2007


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