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SINGLE CRYSTAL MATERIAL FOR SCINTILLATOR AND METHOD FOR PRODUCING SAME 发明申请

2023-03-10 4900 1139K 0

专利信息

申请日期 2025-08-29 申请号 WOJP07052694
公开(公告)号 WO2007099772A1 公开(公告)日 2007-09-07
公开国别 WO 申请人省市代码 全国
申请人 MITSUI MINING SMELTING CO LTD; HATAMOTO Shun ichi; ANZAI Yutaka; HASEGAWA Jun
简介 The present invention aims to obtain a novel single crystal material for scintillators by suppressing phase transition during the cooling and solidification process from the melting point in the production of a rare earth borate mainly containing Lu. Specifically, in a method for producing a single crystal material for scintillators wherein a mixture containing an Lu raw material and a boron oxygen raw material is melted and then cooled and solidified, the single crystal material for scintillators is obtained, while suppressing phase transition of a crystal material by adding an element raw material selected from the group consisting of Sc, Ga and In. By adding Sc or the like into a rare earth borate mainly containing Lu, phase transition can be suppressed while maintaining the radiation absorbing ability and the density at high levels.


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