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Rare earth silicate single crystal and process for production of rare earth silicate single crystals 发明授权

2023-01-06 5430 913K 0

专利信息

申请日期 2026-04-24 申请号 US10898209
公开(公告)号 US7264750B2 公开(公告)日 2007-09-04
公开国别 US 申请人省市代码 全国
申请人 Kazuhisa Kurashige; Naoaki Shimura; Hiroyuki Ishibashi; Akihiro Gunji; Mitsushi Kamada
简介 When produced as a single crystal ingot, a rare earth silicate single crystal 1 can be formed by cutting out from the single crystal ingot. The single crystal 1 has a crystal face F100 whose Miller indices can be determined by X-ray diffraction. The crystal face F100 is composed of a plurality of smooth partial region surfaces (for example, the partial region surface f100A and partial region surface f100B), the plurality of partial region surfaces each have an area detectable by X-ray diffraction, and the angles θ formed between the normal vectors of the plurality of partial region surfaces satisfy the following inequality : [in-line-formulae]0.1°≦θ≦2.0°.  (1)[/in-line-formulae]


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