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R-Fe-B Based Thin Film Magnet And Method For Preparation Thereof 发明申请

2023-12-06 1150 804K 0

专利信息

申请日期 2025-08-02 申请号 US10593624
公开(公告)号 US20070199623A1 公开(公告)日 2007-08-30
公开国别 US 申请人省市代码 全国
申请人 Shunji Suzuki; Kenichi Machida; Eiji Sakaguchi; Kazuya Nakamura
简介 An R—Fe—B based thin film magnet including an R—Fe—B based alloy which contains 28 to 45 percent by mass of R element (where R represents at least one type of rare-earth lanthanide elements) and which is physically formed into a film, wherein the R—Fe—B based alloy has a composite texture composed of R2Fe14B crystals having a crystal grain diameter of 0.5 to 30 μm and R-element-rich grain boundary phases present at boundaries between the crystals. The magnetization characteristics of the thin film magnet are improved. The R—Fe—B based thin film magnet can be prepared by heating to 700° C. to 1, 200° C. during physical film formation or/and the following heat treatment, so as to grow crystal grains and form R-element-rich grain boundary phases.


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