| 简介 |
[Problem] To provide a machining method and a machining apparatus using radical adsorbing transportation, which enable highly efficient machining of a wideband gap semiconductor, etc., such as Si, SiC, GaN, and diamond, by using a chemically reactive radical, and which achieves a simple apparatus configuration because a process is carried out in a dry state, and also achieves easy and safe handling of the apparatus. [Solution] The present invention comprises : generating plasma of a reactive gas obtained by mixing a rare gas with a gas containing an element or a substituent group that generates at least a radical, near a movable tool having a surface having corrosive resistance and adsorption performance with respect to the radical; causing the radical generated in the plasma generation region to be adsorbed in the surface of the tool to provide reaction active species; transporting the reaction active species to the surface of an object to be machined by moving the tool; and etching the surface of the object to be machined with the tool surface set as a machining reference surface by removing a reaction product generated by chemical reaction between the reaction active species and atoms on the surface of the object to be machined, which has been brought into contact with the tool. |
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